DMG4468LFG
N-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Features
Mechanical Data
?
?
?
?
?
?
?
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
?
?
?
?
?
?
?
Case: DFN3030-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.0172 grams (approximate)
8
7
6
5
5
6
7
8
D
G
S
S
S
1
2
3
4
4
3
2
1
TOP VIEW
BOTTOM VIEW
TOP VIEW
Internal Schematic
BOTTOM VIEW
Pin Configuration
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±20
Unit
V
V
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Steady
State
T A = 25°C
T A = 85°C
I D
I DM
7.62
4.83
45.9
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
Symbol
P D
R θ JA
T J , T STG
Value
0.99
126.7
-55 to +150
Unit
W
°C/W
°C
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
DMG4468LFG
Document number: DS31857 Rev. 2 - 2
1 of 6
www.diodes.com
October 2009
? Diodes Incorporated
相关PDF资料
DMG4468LK3-13 MOSFET N-CH 30V 9.7A TO252
DMG4496SSS-13 MOSFET N-CH 30V 10A SO8
DMG4511SK4-13 MOSFET N/P-CH 35V TO252-4L
DMG4710SSS-13 MOSFET N-CH 30V 12.7A SO8
DMG4712SSS-13 MOSFET N-CH 30V 11.2A 8SOIC
DMG4800LFG-7 MOSFET N-CH 30V 7.44A 8DFN
DMG4800LK3-13 MOSFET N-CH 30V 10A TO252
DMG4800LSD-13 MOSFET 2N-CH 30V 8.54A SO8
相关代理商/技术参数
DMG4468LFG-7 功能描述:MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4468LK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMG4468LK3-13 功能描述:MOSFET ENHANCE MODE MOSFET N Chan 30V/6.3-9.7A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4496SSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMG4496SSS-13 功能描述:MOSFET MOSFET N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4511SK4 制造商:Diodes Incorporated 功能描述:MOSFET NP CH COM PAIR 35V TO2524L 制造商:Diodes Incorporated 功能描述:MOSFET, NP CH, COM PAIR, 35V, TO2524L 制造商:Diodes Incorporated 功能描述:MOSFET, NP CH, COM PAIR, 35V, TO2524L, Transistor Polarity:N and P Channel, Continuous Drain Current Id:8.6A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.025ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:1.54W , RoHS Compliant: Yes
DMG4511SK4-13 功能描述:MOSFET MOSFET BVDSS: 31V-40 V-40V,TO252,2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4511SK4-7 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.